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Abstract The physics of charge transport across the interface in an inorganic Si/organic conducting polymer junction diode has received little attention compared to the inorganicp–nsilicon diode. One reason is the amorphous nature of the organic polymer and the polymer chain orientation which introduces disorder and barriers to charge flow. Herein we first present an easy technique to fabricate an inorganic/organic,p-Si/n-poly(benzimidazobenzophenanthroline-BBL) junction diode. The physics of charge transport across the heterojunction, and in the BBL film is then analyzed from the device current-voltage characteristics as a function of temperature in the range 150 K <T< 370 K. The temperature dependence of the diode ideality parameter and of the saturation current density demonstrate that tunneling enhanced charge recombination via exponential trap distributions in the depletion region was responsible for charge transport across the junction. Furthermore, the temperature dependence of the diode conductance revealed that thermal activation and hopping both contributed to charge transport in the BBL film away from the junction. BBL is a ladder polymer with a discrete layered crystal structure that is oriented perpendicular to the substrate. Such polymer chain orientation, combined with a distribution of bond lengths and numerous conjugation paths available for charge delocalization result in the multiple charge transport mechanisms as observed in the diode. 

The electrical characterization and ammonia vapor (NH₃) response of a p‐Si/n‐poly[benzimidazobenzophenanthroline] (n‐BBL) thin‐film junction diode are reported. The presence of a depletion layer at the n‐BBL/p‐Si interface is verifiedviacapacitance–voltage measurements, and the built‐in potential is ≈1.8 V. Using the standard diode equation for data analysis, the turn‐on voltage, rectification ratio, and ideality parameter are found to be 2 V, 16, and 6, respectively. The diode is also tested in the presence of NH₃vapor where it retained its asymmetricJ–Vbehavior with increased currents and an insignificant change in device parameters. NH₃is believed to interact with the adsorbed O₂⁻species on the n‐BBL surface liberating electrons that enhance the diode current. The response time, recovery time, and sensitivity of the diode are 65 s, 121 s, and 52%, respectively. The removal of the gas restores the diode characteristics to their near original shape making it reusable. The diode is also electrically characterized as a function of temperature and is found to retain its rectifying behavior down to 150 K. The rectifying and gas‐sensing features make the diode multifunctional, which expands the range of applications of this ladder‐type conducting polymer. 

Abstract Charge transport in electrostatically doped poly[benzimidazobenzophenanthroline]‐BBL thin films in a field‐effect transistor geometry were investigated in the temperature range 150 K < T < 370 K. At low temperatures activation and hopping transport mechanisms dominated, while phonon scattering dominated at high temperatures. The activation energies (E_A) were found to lie in the range 140 meV < E_A < 400 meV implying the existence of deep traps within the polymer bandgap of 1.8 eV. Two quasi‐linear dependencies ofE_Aon the gate voltage (V_g) were observed withE_Adecreasing asV_gincreased. An unexpected “metallic‐like” transport characteristic appeared forT > 335 K which depended onV_g. Enhanced electron delocalization combined with increased carrier density could be responsible for this “metallic‐like” behavior. Our results show that the existence of deep traps with multiple energy distributions, combined with increased carrier density led to the unusual temperature dependence of charge transport observed in BBL.